OptiMOS™2 Small-Signal-Transistor
Features • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalan...
OptiMOS™2 Small-Signal-
Transistor
Features Dual N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen free according to IEC61249-2-21
BSL207N
Product Summary
VDS RDS(on),max
ID
VGS=4.5 V VGS=2.5 V
20 V 70 mW 110 2.1 A
PG-TSOP6 6 54
Type BSL207N
Package TSOP-6
Tape and Reel Information H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter 1)
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
Marking sPL
Avalanche energy, single pulse
E AS I D=2.1A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=2.1A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C
Gate source voltage Power dissipation1) Operating and storage temperature
V GS P tot T A=25 °C T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1 1) Remark: one of both
transistors in operation
1 2 3
Lead Free Yes
Packing Non dry
Value 2.1 1.7 8.4
10.8
6
±12 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56
Unit A
mJ
kV/µs V W °C
Rev 2.3
page 1
2013-11-06
Parameter
Thermal characteristics Thermal resistance, junction - ambient
Symbol Conditions
BSL207N
min.
Values typ.
Unit max.
R thJA minimal footprint 2) - - 250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D= 250...