BSS119N

OptiMOS™ Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant; Halogen free BSS119N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 100 V 6W 10 0.19 A PG-SOT23 3 1 2 Type BSS119N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sSH Halogen free Packing Yes Non dry Value 0.19 0.15 0.77 Unit A Avalanche energy, single pulse E AS I D=0.19 A, R GS=25 W 2.0 mJ Reverse diode dv /dt dv /dt I D=0.19 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1) Operating and storage temperature ESD Class V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 ±20 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.1 page 1 2012-05-10 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSS119N min. Values typ. Unit max. R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transcon...