OptiMOS™ Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • ...
OptiMOS™ Small-Signal-
Transistor
Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21
BSP296N
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
100 V 0.6 W 0.8 1.2 A
PG-SOT223
Type BSP296N
Package SOT223
Tape and Reel Information Marking
H6327: 1000 pcs/ reel
BSP296N
Halogen-Free Packing Yes Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
1.2 A 0.9 4.6
Avalanche energy, single pulse
E AS I D=1.2 A, R GS=25 W
15.0 mJ
Reverse diode dv /dt
dv /dt
I D=1.2 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C
Gate source voltage Power dissipation Operating and storage temperature ESD Class
V GS P tot T A=25 °C T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±20 1.8 -55 ... 150 0 (<250V) 260 °C 55/150/56
kV/µs
V W °C
Rev 2.0
page 1
2013-04-04
Parameter Thermal characteristics
Symbol Conditions
BSP296N
min.
Values typ.
Unit max.
Thermal resistance, junction - soldering point Thermal resistance
junction - ambient
R thJS
R thJA
minimal footprint 6 cm2 cooling area1)
-
-
- 25 K/W
- 110 - 70
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR...