OptiMOS™ Small-Signal-Transistor
Features • N-channel • Enhancement mode • Avalanche rated • Qualified according to AEC ...
OptiMOS™ Small-Signal-
Transistor
Features N-channel Enhancement mode Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID
BSP373N
100 V 0.24 W 1.8 A
PG-SOT223
Type BSP373N
Package SOT223
Tape and Reel Information H6327: 1000 pcs/ reel
Marking BSP373N
Halogen-Free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=70 °C T A=25 °C
1.8 A 1.5 7.3
Avalanche energy, single pulse
E AS I D=1.8 A, R GS=25 W
33 mJ
Reverse diode dv /dt
dv /dt
I D=1.8 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C
Gate source voltage Power dissipation1) Operating and storage temperature
V GS P tot T A=25 °C T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±20 1.8 -55 ... 150 0 (<250V) 260 °C 55/150/56
kV/µs
V W °C
Rev 2.0
page 1
2013-04-04
Parameter
Thermal characteristics Thermal resistance junction - soldering point Thermal resistance junction - ambient
Symbol Conditions
BSP373N
min.
Values typ.
Unit max.
R thJS R thJA
minimal footprint 6 cm2 cooling area1)
-
- 25 K/W - 110 - 70
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current
Gate-sourc...