2N7002DW

OptiMOS™ Small-Signal-Transistor Features Dual N-channel Enhancement mode Logic level Avalanche rated Fast switching Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3W 4 0.3 A PG-SOT363 65 4 1 2 3 Type Package Tape and Reel Information 2N7002DW PG-SOT363 H6327: 3000 pcs/reel Marking X8s HalogenFree Packing Yes Non Dry Parameter 1) Continuous drain current Pulsed drain current Symbol Conditions I D T A=25 °C T A=70 °C I D,pulse T A=25 °C Value 0.30 0.24 1.2 Unit A Avalanche energy, single pulse E AS I D=0.3 A, R GS=25 W Reverse diode dv /dt Gate source voltage dv /dt V GS I D=0.3 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C ESD class JESD22-A114 (HBM) Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors in operation. 1.3 mJ 6 ±20 class 0 (<250V) 0.5 -55 ... 150 55/150/56 kV/µs V W °C Rev.2.3 page 1 2014-09-19 Parameter Thermal characteristics Thermal resistance, junction - minimal footprint2) Symbol Conditions R thJA 2N7002DW min. Values typ. Unit max. - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA 60 - -V Gate threshold voltage Drain-source leakage current V GS(th) V DS=VGS, I...