2SK1069
Ordering number:EN2749
N-Channel Junction Silicon FET
2SK1069
Low-Frequency General-Purpose Amplifier Applications
App...
Description
Ordering number:EN2749
N-Channel Junction Silicon FET
2SK1069
Low-Frequency General-Purpose Amplifier Applications
Applications
· Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,
low-frequency amplifiers, and constant-current circuits.
Features
· Adoption of FBET process. · Ultrasmall-sized package permitting 2SK1069-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm 2058
[2SK1069]
0.425
0.3 3
0.15 0 to 0.1
0.2
2.1 1.250
12 0.65 0.65
2.0
0.3 0.6 0.9
0.425
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–20V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0, f=1kHz
* : The 2SK1069 is classified by IDSS as follows (unit : mA) :
1.2 3 3.0 2.5 4 6.0 5.0 5 12.0
(Note) Marking : FJ
IDSS rank : 3, 4, 5 For CP package version, use the 2SK771.
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings 40
–40 10 20
150 150 –55 to +150
Unit V V mA mA
mW ˚C ˚C
Ratings min typ max
Unit
–40 V
–1.0 nA
1.2* 12.0* mA
–0.3 –0.9 –2....
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