Document
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications Analog Switching Applications Interface Applications
2SK1062
Unit: mm
• Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode
• Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS VGSS
ID IDP PD Tch Tstg
60 ±20 200 800 200 150 −55~150
V V
mA
mW °C °C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Symbol
Test Condition
IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss
VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 mA, VGS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz
tr
Switching time
Turn-on time Fall time
ton tf
2SK1062
Min Typ. Max Unit
⎯ ⎯ ±100 nA
⎯ ⎯ 10 μA
60 ⎯ ⎯
V
2 ⎯ 3.5 V
100 ⎯
⎯ mS
⎯ 0.6 1.0 Ω
⎯ 30 50 mV
⎯ 55 65 pF
⎯ 13 18 pF
⎯ 40 50 pF
⎯8⎯
⎯ 14 ⎯ ns
⎯ 35 ⎯
Turn-off Time
toff VIN: tr, tf < 5 ns D.U <= 1% (Zout = 50 Ω)
⎯
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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2SK1062
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2SK1062
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2SK1062
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA .