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K1062 Dataheets PDF



Part Number K1062
Manufacturers Toshiba
Logo Toshiba
Description 2SK1062
Datasheet K1062 DatasheetK1062 Datasheet (PDF)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-sou.

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 200 150 −55~150 V V mA mW °C °C JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol Test Condition IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 mA, VGS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz tr Switching time Turn-on time Fall time ton tf 2SK1062 Min Typ. Max Unit ⎯ ⎯ ±100 nA ⎯ ⎯ 10 μA 60 ⎯ ⎯ V 2 ⎯ 3.5 V 100 ⎯ ⎯ mS ⎯ 0.6 1.0 Ω ⎯ 30 50 mV ⎯ 55 65 pF ⎯ 13 18 pF ⎯ 40 50 pF ⎯8⎯ ⎯ 14 ⎯ ns ⎯ 35 ⎯ Turn-off Time toff VIN: tr, tf < 5 ns D.U <= 1% (Zout = 50 Ω) ⎯ Note: This transistor is the electrostatic sensitive device. Please handle with caution. 75 2 2007-11-01 2SK1062 3 2007-11-01 2SK1062 4 2007-11-01 2SK1062 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA .


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