K1062

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications 2SK1062 Unit: mm Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA Enhancement-mode Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range VDS VGSS ID IDP PD Tch Tstg 60 ±20 200 800 200 150 −55~150 V V mA mW °C °C JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source...