TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications Analog Switch Appli...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications Analog Switch Applications Interface Applications
2SK1061
Unit: mm
Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) Low on resistance: RDS (ON) = 0.6 Ω (typ.) Enhancement-mode
Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID IDP PD Tch Tstg
200 800 300 150 −55~150
mA
mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold vol...