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K118

Part Number	K118
Manufacturer	Toshiba Semiconductor
Description	2SK118
Published	May 29, 2015
Detailed Description	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Conde...
Datasheet	K118 PDF File

Overview

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.
5dB (typ.
) (RG = 100 kΩ, f = 120 Hz) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −50 10 100 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of JEDEC ― high temperature/current/voltage and the si...

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