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K1310A Dataheets PDF



Part Number K1310A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet K1310A DatasheetK1310A Datasheet (PDF)

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.) z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range .

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2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.) z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC — temperature/current/voltage and the significant change in EIAJ — temperature, etc.) may cause this product to decrease in the TOSHIBA 2−22C2A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Weight: 17.5 g ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Drain-Source ON Resistance Drain-Source ON Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Po ηD V (BR) DSS IDSS Vth RDS (on) VDS (on) |Yfs| Ciss Coss Crss VDD = 50 V, Iidle = 0.2 A × 2 Pi = 10 W, f = 230 MHz * ID = 10 mA, VGS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V ** ID = 4 A, VGS = 10 V ** ID = 3 A, VDS = 20 V ** VDS = 50 V, VGS = 0, f = 1 MHz VDS = 50 V, VGS = 0, f = 1 MHz VDS = 50 V, VGS = 0, f = 1 MHz *: Push−Pull Operation **: Pulse Test This transistor is the electrostatic sensitive device. Please handle with caution. 2SK1310A MIN. TYP. MAX. UNIT 190 220 — W — 65 — % 100 — — V — — 1.0 mA 0.5 — 3.0 V — 0.9 1.5 Ω — 3.6 6.0 V 0.9 1.3 — S — 100 — pF — 40 — pF — 1 — pF 2 2007-11-01 RF OUTPUT POWER TEST FIXTURE 2SK1310A 3 2007-11-01 2SK1310A CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 4 2007-11-01 2SK1310A RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all ap.


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