Document
2SK1489
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1489
Chopper Regulator Applications
z Low drain−source ON resistance
: RDS (ON) = 0.8 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
z Low leakage current
: IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
1000 1000 ±30
12 36 200 150 −55 to 150
V V V
A
W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
0.625 35.7
°C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss
VGS = ±25 V, VDS = 0 V VDS = 800 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 20 V, ID = 6 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn−on time Fall time
ton tf
Turn−off time
Total gate charge (Gate–source plus gate–drain) Gate−source charge Gate−drain (“miller”) charge
toff
Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 12 A Qgd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
Symbol IDR IDRP VDSF
Test Condition — —
IDR = 12 A, VGS = 0 V
Marking
2SK1489
Min Typ. Max
— — 1000 1.5 — 4.0 — — —
— — — — 0.8 6.0 2000 220 360
±100 300 — 3.5 1.0 — — — —
Unit nA μA V V Ω S
pF
— 100 —
— 140 — — 150 —
ns
— 500 —
— 110 — — 50 — — 60 —
nC
Min Typ. Max Unit — — 12 A — — 36 A — — −1.6 V
TOS.