K1436

Ordering number:EN3574 N-Channel Silicon MOSFET 2SK1436 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1436] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=40A Static Drain-to-Source ON-State Resistance RDS(on) ID=40A, VGS=10V (Note) Be careful in handling the 2SK1436 because it has no protection diode between gate and source. 3.5 20.4 2.0 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML Ratings 100 ±20 50 200 80 3.0 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 100 V 100 µA ±100 nA 1.5 2.5 V 27 45 S 0.023 0.035 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can...