Document
Ordering number:EN3555
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1417
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1417]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=15A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=15A, VGS=10V
(Note) Be careful in handling the 2SK1417 because it has no protection diode between gate and source.
2.7 14.0
1 : Gate
0.4
2 : Drain 3 : Source EIAJ : SC-46 SANYO : TO-220AB
Ratings 60
±20 25
100 60
1.75 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
100 µA
±100 nA
1.5 2.5 V
10 15
S
0.035 0.045 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/2011JN (KOTO) X-6618, 8035 No.3555–1/4
Continued from preceding page.
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage
2SK1417
Symbol
Conditions
Ciss
Coss
Crss
td(on) tr
td(off) tf
VSD
VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz ID=15A, VGS=10V, VDD=30V, RGS=50Ω ID=15A, VGS=10V, VDD=30V, RGS=50Ω ID=15A, VGS=10V, VDD=30V, RGS=50Ω ID=15A, VGS=10V, VDD=30V, RGS=50Ω IS=25A, VGS=0
Switching Time Test Circuit
Ratings min typ max
Unit
1200
pF
550 pF
150 pF
18 ns
102 ns
130 ns
90 ns
1.8 V
No.3555–2/4
2SK1417
No.3555–3/4
2SK1417
Specifications of any and all SANYO products describe.