K1414

Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=20V, ID=3A Static Drain-to-Source ON-State Resistance RDS(on) ID=3A, VGS=10V (Note) Be careful in handling the 2SK1414 because it has no protection diode between gate and source. 5.45 2.8 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL Ratings 1500 ±20 6 12 3.5 200 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 1500 V 100 µA ±100 nA 1.5 3.5 V 1.0 3.0 S 2.5 3.5 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applicatio...