Ordering number:EN4228
N-Channel Silicon MOSFET
2SK1412
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching.
· High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm
2078B
10.0 3.2
[2SK1412]
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=1200V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer .