TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
High breakdown voltage High forward transfer admittance Complementary to 2SJ201
: VDSS = 200V : |Yfs| = 5.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power diss...
