K1830

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications 2.5 V gate drive Low threshold voltage: Vth = 0.5 to 1.5 V High speed Enhancement-mode Small package Marking Equivalent Circuit 2SK1830 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 50 100 150 −55 to 150 Unit V V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 Electrical Characteristics (Ta = 25°C) 2SK1830 Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current...