TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications Analog Switch Appli...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications Analog Switch Applications
2.5 V gate drive Low threshold voltage: Vth = 0.5 to 1.5 V High speed Enhancement-mode Small package
Marking
Equivalent Circuit
2SK1830
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGSS
ID PD Tch Tstg
Rating
20 10 50 100 150 −55 to 150
Unit
V V mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This
transistor is electrostatic sensitive device. Please handle with caution.
Start of commercial production
1991-02 1 2014-03-01
Electrical Characteristics (Ta = 25°C)
2SK1830
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current...