K1826

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Low threshold voltage: Vth = 0.8~2.5 V · High speed · Enhancement-mode · Small package Marking Equivalent Circuit 2SK1826 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg 50 10 50 200 150 -55~150 Note: This transistor is electrostatic sensitive device. Please handle with caution. Unit V V mA mW °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) 1 2003-03-27 2SK1826 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA V (BR) DSS ID = 100 mA, VGS = 0 50 ¾ ¾ V IDSS VDS = 50 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 5 V, ID = 0.1 mA 0.8 ¾ 2.5 V ïYfsï VDS = 5 V, ID = 10 mA 20 ¾ ¾ mS RDS (ON) ID = 10 mA, VGS = 4.0 V ¾ 20 50 W Ciss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 6.3 ¾ pF Crss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 1.3 ¾ pF Coss VDS = 5 V, VGS = 0, f = 1 MHz ¾ 5.7 ¾ pF ton VDD = 5...