K1813

Ordering number:EN4177 Features · Low ON resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1813 High-Speed Switching Applications Package Dimensions unit:mm 2089 [2SK1813] 10.2 4.5 1.3 11.5 1.6 0.9 11.0 8.8 20.9 1.2 9.4 0.8 0.4 Specifications 123 2.55 2.55 2.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 100 ±20 30 120 1.65 70 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage VDSS ID=1mA, VGS=0 Zero-Gate Votlage Drain Current IDSS VDS=100V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=20A Static Drain-to-Source On-State Resistance RDS(on) ID=20A, VGS=10V (Note) Be careful in handling the 2SK1813 because it has no protection diode between gate and source. Ratings min typ max Unit 100 V 100 µA ±100 nA 1.5 2.5 V 13 22 S 0.040 0.055 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such ...