K1740

Ordering number : EN4112A 2SK1740 SANYO Semiconductors DATA SHEET 2SK1740 N-Channel Junction Silicon FET HF Amplifiers Low-Frequency Amplifiers Analog Switches Features Adoption of FBET process. Large yfs. Small Ciss Small-sized package permitting 2SK1740-applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 40 --40 10 75 250 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure Static Drain-to-Source On-State Resistance Marking : IJ V(BR)GDS IGSS VGS(off) IDSS yfs1 yfs2 Ciss Crss NF RDS(on) IG=--10µA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=100µA VDS=10V, VGS=0V VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz ID=10mA, VGS=0V * : Pulse Test Pulse Width≤2ms. * : The 2SK1740 is classified by IDSS as follows : (unit : mA). Rank 3 4 5 IDSS 40 to 52 48 to 63 57 to 75 min --40 Ratings typ --2.0 --3.0 40* 10 15 22 30 11 2.5 1.5 30 max --1.0 --5.0 75* Any and all SANYO Semiconductor products described or contained herei...