Final Data Sheet
IPB180P04P4-03
OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • ...
Final Data Sheet
IPB180P04P4-03
OptiMOS®-P2 Power-
Transistor
Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
Product Summary V DS R DS(on) ID
-40 V 2.8 mW -180 A
PG-TO263-7-3
Type IPB180P04P4-03
Package PG-TO263-7-3
Marking 4QP0403
Gate Pin 1
Drain Pin 4, Tab
Source Pin 2, 3, 5, 6, 7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
-180
-131
-720 90 -180 ±20 150 -55 ... +175 55/175/56
A
mJ A V W °C
Rev. 1.0
page 1
2011-04-27
Final Data Sheet
IPB180P04P4-03
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.0 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
-40
-
-...
