NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE7580D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7580D ...
Description
http://www.ncepower.com
Pb Free Product
NCE7580D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7580D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Schematic diagram Marking and pin assignment
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7580D
NCE7580D
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Peak diode recovery voltage
ID (100℃)
IDM PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
75 ±25 80 60 320 170 15 1.13 580 -55 To 175
Unit
V V A A A W V/ns W/℃ mJ ℃...
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