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NCE7080 Dataheets PDF



Part Number NCE7080
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE7080 DatasheetNCE7080 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE7080 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE7080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =70V,ID =80A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS .

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http://www.ncepower.com Pb Free Product NCE7080 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE7080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =70V,ID =80A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package NCE7080 NCE7080 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current IDM Maximum Power Dissipation PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 70 ±20 80 56 310 150 1 450 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE7080 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 70 74 - V Zero Gate Voltage Drain Current IDSS VDS=70V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 23 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A - 6.3 8 mΩ Forward Transconductance gFS VDS=25V,ID=30A 50 - - S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz - 3400 - 310 - 221 - PF PF PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 15 - nS Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω - 11 - nS Turn-Off Delay Time td(off) VGS=10V,RG=2.5Ω - 52 - nS Turn-Off Fall Time tf - 13 - nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - 94 - nC VDS=30V,ID=30A, Qgs - 16 - nC VGS=10V Qgd - 24 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=30A - - 1.2 V Diode Forward Current (Note 2) IS - - 78 A Reverse Recovery Time trr TJ = 25°C, IF =75A - 33 nS Reverse Recovery Charge Qrr di/dt = 100A/μs(Note3) - 54 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=35V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Test circuit 1)EAS test Circuits Pb Free Product NCE7080 2)Gate charge test Circuit: 3)Switch Time Test Circuit: Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 ID- Drain Current (A) http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Pb Free Product NCE7080 Normalized On-Resistance Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 C Capacitance (pF) http://www.ncepower.com Pb Free Product NCE7080 Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 http://www.ncepower.com Pb Free Product NCE7080 Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 http://www.ncepower.com Pb Free Product NCE7080 TO-220-3L Package Information Symbol A A1 b b1 c c1 D E E1.


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