Document
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Pb Free Product
NCE7080
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE7080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =70V,ID =80A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7080
NCE7080
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
70 ±20 80 56 310 150
1 450 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE7080
Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
70 74
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=70V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
- 6.3
8
mΩ
Forward Transconductance
gFS
VDS=25V,ID=30A
50 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss Crss
VDS=25V,VGS=0V, F=1.0MHz
- 3400 - 310 - 221
-
PF PF PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 15
-
nS
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
11
-
nS
Turn-Off Delay Time
td(off)
VGS=10V,RG=2.5Ω
- 52
-
nS
Turn-Off Fall Time
tf
- 13
-
nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg
- 94
-
nC
VDS=30V,ID=30A,
Qgs
- 16
-
nC
VGS=10V
Qgd
- 24
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=30A
- - 1.2
V
Diode Forward Current (Note 2)
IS
- - 78
A
Reverse Recovery Time
trr
TJ = 25°C, IF =75A
- 33
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
- 54
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=35V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE7080
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
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ID- Drain Current (A)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Pb Free Product
NCE7080
Normalized On-Resistance
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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C Capacitance (pF)
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Pb Free Product
NCE7080
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
ID- Drain Current (A)
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE7080
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE7080
TO-220-3L Package Information
Symbol
A A1 b b1 c c1 D E E1.