NCE6075K

http://www.ncepower.com Pb Free Product NCE6075K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package NCE6075K NCE6075K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Limit 60 ±20 75 50 300 110 0.73 450 -55 To 175 1.36 Unit V V A A A W W/℃ mJ ℃ ℃/W Wuxi...