NCE55H11

http://www.ncepower.com Pb Free Product NCE55H11 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.5mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE55H11 NCE55H11 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) EAS Limit 55 ±20 110 78 440 200 1.33 1100 Unit V V A A A W W/℃ mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.2 http://www.ncepower.com Pb Free Product NCE55H11 Operating Junction and Storage Temperature Range TJ,...