NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE55H11
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE55H11 ...
Description
http://www.ncepower.com
Pb Free Product
NCE55H11
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.5mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE55H11
NCE55H11
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5)
EAS
Limit
55 ±20 110 78 440 200 1.33 1100
Unit
V V A A A W W/℃ mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2
http://www.ncepower.com
Pb Free Product
NCE55H11
Operating Junction and Storage Temperature Range
TJ,...
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