NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE85H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21 ...
Description
http://www.ncepower.com
Pb Free Product
NCE85H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
● VDSS =85V,ID =210A(Note5) RDS(ON) < 3.8mΩ @ VGS=10V
● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Schematic diagram
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21
NCE85H21
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Limit
85 ±20 210(Note5) 150 850 310 2.07
Unit
V V A A A W W/℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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http://www.ncepower.com
Pb Free Product
NCE85H21
Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4...
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