NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE80H11D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H11...
Description
http://www.ncepower.com
Pb Free Product
NCE80H11D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H11D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE80H11D
NCE80H11D
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
ID (100℃)
IDM PD
Single pulse avalanche energy (Note 5)
EAS
Limit
80 ±20 105 80 420 200 1.33 800
Unit
V V A A A W W/℃ mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE80H11D
Operating Junction and Storage Temperature Range
T...
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