IPD90N06S4L-03

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon IPD90N06S4L-03 Product Summary V DS R DS(on),max ID 60 V 3.5 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-03 Package Marking PG-TO252-3-11 4N06L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 331 90 ±16 150 -55 ... +175 55/175/56 Unit A mJ A V W °C − Rev. 1.0 Downloaded from Elcodis.com electronic components distributor page 1 2009-03-24 IPD90N06S4L-03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.0 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V...