1SS388
FEATURES :
* Small package * Low forward voltage * Low revese current * Pb / RoHS Free
MECHANICAL DATA :
* Lesd F...
1SS388
FEATURES :
* Small package * Low forward voltage * Low revese current * Pb / RoHS Free
MECHANICAL DATA :
* Lesd Finish : 100% Matte Sn (Tin) * Mounting Position : Any * Qualified Max Reflow Temperature : 260 °C
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Peak Forward Current Maximum Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Electrical Characteristics (Ta = 25 °C)
Parameter
Forward Voltage Reverse Current Total Capacitance
Symbol
VF IR CT
Certificate : TH97/10561QM
Certificate : TW00/17276EM
SILICON EPITAXIAL
SCHOTTKY BARRER DIODE
SOD-523
1.25 1.15
0.8 0.70 5 0.60 0.7
0.4 0.135 0.3 0.127
1.65 1.55
Dimensions in millimeters
Symbol
VRM VR IF IFM IFSM Ptot TJ TSTG
Value
45 40 100 300 1.0 150 125 -55 to + 125
Unit
V V mA mA A mW °C °C
Test Condition IF = 50 mA VR = 10 V f = 1MHz
Max. 0.6 5 25
Unit V μA pF
Page 1 of 2
Rev. 00 : May 7, 2007
POWER DISSIPATION, (mW)
Certificate : TH97/10561QM
Certificate : TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( 1SS388 )
FIG.1 - POWER DISSIPATION VS. AMBIENT TEMPERATURE
150
120
90
60
30
0 0 25 50 75 100
AMBIENT TEMPERATURE, ( °C)
125
TOTAL CAPACITANCE, (pF)
FIG.2 - TOTAL CAPACITANCE VS. REVERSE VOLTAGE
100
10
1 0 4 8 12 16 20 24 28 32 36
REVERSE VOLTAGE, (V)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1000 100
10
1 Ta = 25 °C
0.1 0
0.2 0.4 0.6
0.8 1.0 1.2
FORWARD VO...