MDD1903

MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Rating 100 ±20 11 7.3 30 39 15 -55~150 Unit V V A A A W oC Symbol RθJA RθJC Rating 52 3.2 Unit oC/W Jan. 2011. Version 2.0 1 MagnaChip Semiconductor Ltd. MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice Ordering Information Part Number MDD1903RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (Tc =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Re...