OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
OptiMOS®-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.3 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S4-03 IPI80N04S4-03 IPP80N04S4-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0403 4N0403 4N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 80
80
320 200 80 ±20 94 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.0
page 1
2010-04-13
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 1.6 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown volta...
