CM2304

CM2304 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±20VGS/3.6A(ID) Part No CM2304 Description The NCE2304 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.. Application ●Battery protection ●Load switch ●Power management Product Summary VDS = 30V,I D = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) <58m Ω @ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Current Drain Pulsed Drain Current(Note 1) Power Description Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 2) VDS VGS ID IDM PD Tj， TSTG RθJA Maximum 30 ±20 3.6 15 1.7 -55°C to 150° 73.5 Units V V A A W ℃ ℃/w TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD Rev. 1. 3 Dec. 2012 www.chimicron.com info@chimicron.com Page 1 of 5 CM2304 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans conductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off F...