NCE4036F

http://www.ncepower.com Pb Free Product NCE4036F NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4036F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =-40V,ID =-36A RDS(ON) <16mΩ @ VGS=-10V RDS(ON) <23mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220F top view Package Marking And Ordering Information Device Marking Device Device Package NCE4036F NCE4036F TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Operating Junction and Storage Temperature Range TJ,TSTG Limit -40 ±20 -36 -25 -140 33 0.26 -55 To 150 Unit V V A A A W W/℃ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE4036F Thermal Characteris...