NCE3012S

http://www.ncepower.com Pb Free Product NCE3012S NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 3012S NCE3012S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -30 ±20 -12 -48 3 -55 To 150 41.67 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Min Typ Max Unit Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE3012S Drain-Source Breakdown Voltage Zero Gat...