NCE4435

Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4435 NCE4435 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -30 ±20 -9.1 -50 3.1 -55 To 150 40 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Min Typ Max Unit -30 -33 - V Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain...