NCE P-Channel Enhancement Mode Power MOSFET
Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4435 uses advanced trench techn...
Description
Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL FEATURES
● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
D G
S Schematic diagram
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Marking and pin Assignment
Application
●Battery Switch ●Load switch ●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4435
NCE4435
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30 ±20 -9.1 -50 3.1 -55 To 150
40
Unit
V V A A W ℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 -33
-
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage
Drain...
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