NCE2301

http://www.ncepower.com Pb Free Product NCE2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2301 NCE2301 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -20 ±12 -3 -10 1 -55 To 150 125 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Min Typ Max Unit -20 -24 -- -1 V μA Wuxi NCE ...