NCE2305A

http://www.ncepower.com Pb Free Product NCE2305A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management\ Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 2305A NCE2305A SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current -Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit -12 ±8 -4.1 -15 1.7 -55 To 150 74 Unit V V A A W ℃ ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Min Typ Max Unit Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepower.com Pb Free Product NCE2305A Drain-Source Breakdown Vo...