FTU01N60

600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 4.8nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  CFL  Active PFC  Low Power Lamp Ballasts  Low Power Adaptor/Battery Chargers FTU01N60/FTD01N60 BVDSS 600V RDS(ON) (Max.) 9.0Ω ID 1.0A Ordering Information Part Number Package FTU01N60 TO-251（I-PAK） FTU01N60G TO-251（I-PAK） FTD01N60 TO-252（D-PAK） FTD01N60G TO-252（D-PAK） Marking 01N60 01N60G 01N60 01N60G Remark RoHS Halogen-free RoHS Halogen-free Absolute Maximum Ratings Symbol VDSS Parameter Drain-to-Source Voltage[1] ID Continuous Drain Current ID@100℃ IDM PD Continuous Drain Current Pulsed Drain Current, VGS@10V[2] Power Dissipation Derating Factor above 25℃ VGS EAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy L=40mH, ID=1.0A Peak Diode Recovery dv/dt[3] TL Soldering Temperature Distance of 1.6mm from case for 10 seconds TJ and TSTG Operating and Storage Temperature Range TC=25℃ unless otherwise specified FTU01N60 FTD01N60 Unit 600 V 1.0 Figure 3 A Figure 6 29 W 0.23 W/℃ ±30 V 20 mJ 4.5 V/ns 300 -55 to 150 ℃ Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. ARK Microelectronics Co., Ltd. w w w. a r k - m i c r o . c o m 1/11 Rev. 2.1 Jan. 2012 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA T...