AON7934

AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Q1 30V 16A <10.2mΩ <15.8mΩ Q2 30V 18A <7.7mΩ <11.6mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Power DFN3x3A Top View Bottom View G2 S2 S2 S2 (S1/D2) D1 Top View Bottom View D1 G1 D1 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 ±20 ±20 16 18 12 14 64 72 13 15 7.8 9 19 25 3.0 4.1 36 36 23 25 9 10 2.5 2.5 0.9 0.9 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 40 70 4.5 Max Q1 50 90 5.4 Typ Q2 40 70 4.2 Max Q2 50 90 5 Units ...