CS8N65F

BRF8N65(CS8N65F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 650 V ID(Tc=25℃) 7.5 A ID(Tc=100℃) 4.6 A IDM 30 A VGSS ±30 V EAS 230 mJ EAR 10 mJ IAR 7.5 A PD(Tc=25℃) 48 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA IDSS VDS=650V VDS=480V VGS=0V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=3.75A gFS VDS=40V ID=3.75A VSD VGS=0V IS=7.5A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) VDD=300V ID=7.5A RG=25Ω tf Min 650 2.0 Typ 1.0 8.7 965 105 12 16.5 60.5 81 64.5 Max 1.0 10 ±0.1 4.0 1.4 1.4 1255 135 16 45 130 170 140 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. Unit V μA μA μA V Ω S V pF ns BRF8N65(CS8N65F) FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. ...