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IPD70N10S3-12
Power Transistor
Description
OptiMOS™-T Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ra...
Infineon Technologies
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IPD70N10S3-12
Power Transistor
- Infineon Technologies
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