IPD75N04S4-06

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPD75N04S4-06 Product Summary V DS R DS(on),max ID 40 V 5.9 mΩ 75 A PG-TO252-3-313 Type IPD75N04S4-06 Package Marking PG-TO252-3-313 4N0406 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 75 53 300 72 75 ±20 58 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2010-07-15 IPD75N04S4-06 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - - minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 2.6 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V D...