OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
OptiMOS® Power-
Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPD22N08S2L-50
Product Summary V DS R DS(on),max ID
75 V 50 mΩ 25 A
PG-TO252-3-11
Type IPD22N08S2L-50
Package
Marking
PG-TO252-3-11 2N08L50
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V1)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=22A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 27
19
108 94 ±20 75 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.0
page 1
2006-07-18
IPD22N08S2L-50
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area2)
min.
Values typ.
Unit max.
- - 2 K/W - - 100 - - 75 - - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=31 µA 1.2 1.6 2.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,...