IPU25CNE8NG

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 85 V 25 mΩ 35 A 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package Marking PG-TO263-3 26CNE8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=35 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Rev. 1.0 page 1 35 25 140 65 6 ±20 71 -55 ... 175 55/175/56 A mJ kV/µs V W °C 2006-02-17 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistan...