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TC58NYG2S3ETA00

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Description

TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks. The device has two 2112-byte static registe...

Toshiba

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TC58NYG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM - Toshiba

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