Document
BGU6101
Wideband silicon low-noise amplifier MMIC
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6101 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation.
1.2 Features and benefits
Supply voltage range from 1.5 V to 5 V Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage NFmin of 0.8 dB Applicable between 40 MHz and 4 GHz Integrated temperature-stabilized bias for easy design Bias current configurable with external resistor Power-down mode current consumption < 6 A ESD protection on all pins up to 3 kV HBM Small 6-pin leadless package 2.0 mm 1.3 mm 0.35 mm
1.3 Applications
FM radio Mobile TV, CMMB ISM Wireless security
RKE, TPMS AMR, ZigBee, Bluetooth WiFi, WLAN (2.4 GHz) Low current applications
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
s212
insertion power gain
f = 450 MHz f = 900 MHz
- 13.0 - 12.0 -
dB dB
NFmin minimum noise figure
f = 2400 MHz; ICC(tot) = 3 mA f = 450 MHz f = 900 MHz
- 13.0 - 0.8 - 0.8 -
dB dB dB
f = 2400 MHz; ICC(tot) = 3 mA
- 1.3 -
dB
NXP Semiconductors
BGU6101
Wideband silicon low-noise amplifier MMIC
Table 1. Quick reference data …continued Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE 1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(1dB)
output power at 1 dB gain f = 450 MHz
compression
f = 900 MHz
- 11.0 - 11.5 -
dBm dBm
IP3O
output third-order intercept point
f = 2400 MHz; ICC(tot) = 3 mA f = 450 MHz f = 900 MHz
- 6.5 - 2.5 - 2.0 -
dBm dBm dBm
f = 2400 MHz; ICC(tot) = 3 mA
- 6.5 -
dBm
2. Pinning information
2.1 Pinning
Fig 1. Pin configuration
16 25 34
Transparent top view
2.2 Pin description
Table 2. Pin description
Symbol
Pin
VCC
1
n.c. 2
RF_IN
3
RF_OUT
4
ENABLE
5
CUR_ADJ
6
GND
GND
Description supply voltage not connected RF in RF out enable current adjust ground pad; RF and DC ground
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
BGU6101
HXSON6 plastic thermal enhanced super thin small outline
SOT1209
package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm
BGU6101
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
2 of 20
NXP Semiconductors
BGU6101
Wideband silicon low-noise amplifier MMIC
4. Marking
Table 4. Marking Type number BGU6101
Marking 1A*
Description * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
VCC supply voltage
VENABLE voltage on pin ENABLE
VRF_IN voltage on pin IN
VRF_OUT voltage on pin RF_OUT
ICC(tot) total supply current
Tstg storage temperature
Tj junction temperature
VESD
electrostatic discharge voltage
RF input, AC coupled
DC DC VCC = 5.0 V
Human Body Model (HBM); according to JEDEC standard 22-A114E
- 5.5 [1] 0.5 VCC + 1.8 [2] 0.5 0.9
0.5 VCC + 0.6 - 40 55 +150 - +150 - 3000
Charged Device Model (CDM); according to JEDEC standard 22-C101B
- 500
Unit V V V V mA C C V
V
[1] Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current.
[2] The RF input is directly coupled to the base of the RF transistor.
6. Thermal characteristics
Table 6. Symbol Rth(j-sp)
Thermal characteristics Parameter thermal resistance from junction to solder point
Conditions
Typ Unit 110 K/W
BGU6101
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
3 of 20
NXP Semiconductors
BGU6101
Wideband silicon low-noise amplifier MMIC
7. Static characteristics
Table 7. Symbol VCC ICC(tot)
Static characteristics Parameter supply voltage total supply current
Tamb
ambient temperature
[1] ICC(tot) = ICC + IRF_OUT + IR_BIAS. [2] Configurable with external resistor.
Conditions RF input, AC coupled VCC = 3.0 V VENABLE 0.4 V
Min Typ Max Unit
1.5 -
5.0 V
[1][2] 0.9 -
10 mA
[1] - - 0.01 mA
40 +25 +85 C
BGU6101
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 February 2012
© NXP B.V. 2012. All rights reserved.
4 of 20
NXP Semiconductors
BGU6101
Wideband silicon low-noise amp.