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BGU6101 Dataheets PDF



Part Number BGU6101
Manufacturers NXP
Logo NXP
Description Wideband silicon low-noise amplifier MMIC
Datasheet BGU6101 DatasheetBGU6101 Datasheet (PDF)

BGU6101 Wideband silicon low-noise amplifier MMIC Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6101 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation. 1.2 Features and benefits  Supply voltage range from 1.5 V to 5 V  Current range up to 10 mA at 3 V and 20 mA at 5 V supply v.

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BGU6101 Wideband silicon low-noise amplifier MMIC Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description The BGU6101 MMIC is an unmatched wideband MMIC featuring an integrated bias, enable function and wide supply voltage. BGU6101 is part of a family of three products (BGU6101, BGU6102 and BGU6104) and is optimized for 1 mA operation. 1.2 Features and benefits  Supply voltage range from 1.5 V to 5 V  Current range up to 10 mA at 3 V and 20 mA at 5 V supply voltage  NFmin of 0.8 dB  Applicable between 40 MHz and 4 GHz  Integrated temperature-stabilized bias for easy design  Bias current configurable with external resistor  Power-down mode current consumption < 6 A  ESD protection on all pins up to 3 kV HBM  Small 6-pin leadless package 2.0 mm  1.3 mm  0.35 mm 1.3 Applications  FM radio  Mobile TV, CMMB  ISM  Wireless security  RKE, TPMS  AMR, ZigBee, Bluetooth  WiFi, WLAN (2.4 GHz)  Low current applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE  1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit s212 insertion power gain f = 450 MHz f = 900 MHz - 13.0 - 12.0 - dB dB NFmin minimum noise figure f = 2400 MHz; ICC(tot) = 3 mA f = 450 MHz f = 900 MHz - 13.0 - 0.8 - 0.8 - dB dB dB f = 2400 MHz; ICC(tot) = 3 mA - 1.3 - dB NXP Semiconductors BGU6101 Wideband silicon low-noise amplifier MMIC Table 1. Quick reference data …continued Tamb = 25 C; VCC = 3.0 V; ICC(tot) = 1.5 mA; VENABLE  1.2 V unless otherwise specified. All measurements done on characterization board without matching, de-embedded up to the pins. Symbol Parameter Conditions Min Typ Max Unit PL(1dB) output power at 1 dB gain f = 450 MHz compression f = 900 MHz - 11.0 - 11.5 - dBm dBm IP3O output third-order intercept point f = 2400 MHz; ICC(tot) = 3 mA f = 450 MHz f = 900 MHz - 6.5 - 2.5 - 2.0 - dBm dBm dBm f = 2400 MHz; ICC(tot) = 3 mA - 6.5 - dBm 2. Pinning information 2.1 Pinning Fig 1. Pin configuration 16 25 34 Transparent top view 2.2 Pin description Table 2. Pin description Symbol Pin VCC 1 n.c. 2 RF_IN 3 RF_OUT 4 ENABLE 5 CUR_ADJ 6 GND GND Description supply voltage not connected RF in RF out enable current adjust ground pad; RF and DC ground 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGU6101 HXSON6 plastic thermal enhanced super thin small outline SOT1209 package; no leads; 6 terminals; body 2 x 1.3 x 0.35 mm BGU6101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 February 2012 © NXP B.V. 2012. All rights reserved. 2 of 20 NXP Semiconductors BGU6101 Wideband silicon low-noise amplifier MMIC 4. Marking Table 4. Marking Type number BGU6101 Marking 1A* Description * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max VCC supply voltage VENABLE voltage on pin ENABLE VRF_IN voltage on pin IN VRF_OUT voltage on pin RF_OUT ICC(tot) total supply current Tstg storage temperature Tj junction temperature VESD electrostatic discharge voltage RF input, AC coupled DC DC VCC = 5.0 V Human Body Model (HBM); according to JEDEC standard 22-A114E - 5.5 [1] 0.5 VCC + 1.8 [2] 0.5 0.9 0.5 VCC + 0.6 - 40 55 +150 - +150 - 3000 Charged Device Model (CDM); according to JEDEC standard 22-C101B - 500 Unit V V V V mA C C V V [1] Due to internal ESD diode protection, the applied voltage should not exceed the specified maximum in order to avoid excess current. [2] The RF input is directly coupled to the base of the RF transistor. 6. Thermal characteristics Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ Unit 110 K/W BGU6101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 February 2012 © NXP B.V. 2012. All rights reserved. 3 of 20 NXP Semiconductors BGU6101 Wideband silicon low-noise amplifier MMIC 7. Static characteristics Table 7. Symbol VCC ICC(tot) Static characteristics Parameter supply voltage total supply current Tamb ambient temperature [1] ICC(tot) = ICC + IRF_OUT + IR_BIAS. [2] Configurable with external resistor. Conditions RF input, AC coupled VCC = 3.0 V VENABLE  0.4 V Min Typ Max Unit 1.5 - 5.0 V [1][2] 0.9 - 10 mA [1] - - 0.01 mA 40 +25 +85 C BGU6101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 February 2012 © NXP B.V. 2012. All rights reserved. 4 of 20 NXP Semiconductors BGU6101 Wideband silicon low-noise amp.


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