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NTY100N10

ON Semiconductor
Part Number NTY100N10
Manufacturer ON Semiconductor
Description Power MOSFET
Published May 19, 2015
Detailed Description NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package Features • Source−to−Drai...
Datasheet PDF File NTY100N10 PDF File

NTY100N10
NTY100N10

Overview
NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available* Applications • PWM Motor Control • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1 MW) Gate−Source Voltage − Continuous − Non−Repetitive (tp v 10 ms) Drain Current (Note 1) − Continuous @ TC = 25°C − Pulsed Total Power Dissipation (Note 1) Derate above 25°C VDSS VDGR 100 100 V V VGS V...


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