HT3401

OB2269 HT3401 P-Channel Enhancement Mode Field Effect Transistor General Description The HT3401 uses advanced trench technology to Provide excellent RDS(ON),low gate change and Operation with gate voltages as low as 2.5V.This Device is suitable for use as a load switch or in PWM applications. Standard product HT3401 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)<50mΩ(VGS=-10V) RDS(ON)<65mΩ(VGS=-4.5V) RDS(ON)<120mΩ(VGS=-2.5V) Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current (A) TA=70°C Junction and Storage Temperature Range Power Dissipation TA=25°C (A) TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum junction-to-Ambient(A) Maximum junction-to-Ambient(A) Maximum junction-to-Lead(C) t≤ 10s Steady-State Steady-State Symbol VDS VGS ID IDM PD TJ,TSTG Symbol RθJA RθJL Typ 65 85 43 Maximum -30 +12 -4.2 -3.5 -3.0 1.4 1 -55 to 150 Max 90 125 60 Units V V A W ℃ Units °C/W °C/W °C/W Ver1.0 HT3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Voltage Breakdown ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain VDS=-24V,VGS=0V Current TJ=55℃ -30 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-4.5V, VDS=-...