N-CHANNEL MOSFET
Shanghai Jin-ec Electronic& Technology Co., Ltd
JHW5N60
N N-CHANNEL MOSFET
MAIN CHARACTERISTICS
Package
ID ...
Description
Shanghai Jin-ec Electronic& Technology Co., Ltd
JHW5N60
N N-CHANNEL MOSFET
MAIN CHARACTERISTICS
Package
ID A VDSS 600 V Rdson(@Vgs=10V) 2.5Ω Qg 27 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 14pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JHW5N60V-O-V-N-B JHW5N60R-O-R-N-B JHW5N60S-O-S-N-B JHW5N60B-O-B-N-B JHW5N60C-O-C-N-B JHW5N60F-O-F-N-B
JHW5N60V JHW5N60R JHW5N60S JHW5N60B JHW5N60C JHW5N60F
Package
IPAK DPAK TO-263 TO-262 TO-220C TO-220MF
Halogen Free Packaging
NO NO NO NO NO NO
Tube Tube Tube Tube Tube Tube
Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ)
1/13
ABSOLUTE RATINGS (Tc=25℃)
JHW5N60
Parameter
- Drain-Source Voltage
Symbol
VDSS
Value JHW5N60V/R JHW5N60S/B/C
600
Drain Current -continuous
ID T=25℃ T=100℃
4.5 2.6
( 1)
Drain Current - pulse (note 1)
IDM
18
Gate-Source Voltage
VGSS
±30
( 2)
Single Pulsed Avalanche Energy
EAS
210
note 2)
( 1)
Avalanche Current (note 1)
IAR
4.5
( 1)
Repetitive Avalanche Current (note 1)
EAR
10.0
( 3) Peak Diode Recovery
dv/dt
4.5
dv/dt (note 3)
Power Dissipation
PD TC=25℃ -Derate above
51 0.39
100 0.80
25℃
Operating and Storage Temperature Range
TJ,TST...
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